Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well

Abstract

We study the irradiation effects of the GaN-based blue light-emitting diodes（LEDs） with InGaN/GaN multi-quantum well irradiated by five doses of 60Co （4×104 Ci） at room temperature. From the analyses of the characteristics of the current-voltage （I-V） relation, current-luminous flux （F-L） relation, chromatic purity, luminous intensity, luminous flux, the full width at half maximum, and the wavelength of LEDs samples before and after irradiation, we obtain the effects of γ irradiation on the devices. It shows that the consistency and uniformity of the samples become worse after irradiation. At the 20 mA working current, the luminous intensity reduces by 90% and the luminous flux falls by 40% at the maximum total dose. The quantity τ0Kγ describing the radiation hardness of the LEDs is equal to 4.039×10-7 rad·s-1, and the saturation current increases at lower positive bias （<2.6 V） with the increasing total dose.