Author:
Dong Ya-Juan ,Zhang Jun-Bing ,Chen Hai-Tao ,Zeng Xiang-Hua ,
Abstract
In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector(ODR) has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED's luminous flux, the efficiency and the color purity are improved by 6.04%, 5.74%, 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference9 articles.
1. Tu S H, Lan C J, Wang S H, Lee M L, Chang K H, Lin R M, Chang J Y, Sheu J K 2010 Appl.Phys.Lett. 96 133504
2. Horng R H, Zheng X H, Hsieh C Y, Wuu D S 2008 Appl.Phys.Lett. 93 021125
3. Lin H, Liu S, Zhang X U, Liu B L, Ren X C 2009 Acta. Phys. Sin. 58 2(in Chinese)[林 瀚、刘 守、张向苏、刘宝林、任雪畅 2009 物理学报 58 2]
4. Li Y B, Guo X, Guan B L, Chuai D X, Shen G D 2009 Research & Progress of SSE 29 3 [李一博、郭 霞、关宝路、揣东旭、沈光地 2009 固体电子学研究与进展 29 3]
5. Gessmann T, Schubert E F, Graff J W, Streubel K, Karnutsch C 2003 IEEE Trans. Electr. Devices 24 683
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献