Electronic properties of disordered bilayer hexagonal boron nitride quantum films

Abstract

Based on the Anderson tight-binding model, the electronic properties of disordered bilayer hexagonal boron nitride quantum films are investigated. Our numerical results show that the electrons in a disordered bilayer hexagonal boron nitride quantum film are localized, presenting an insulating property. However, for the monolayer disordered bilayer hexagonal boron nitride quantum film, the energy spectrum has persistent mobility edges which are independent of the disorder strength. This indicates that a metal-insulator transition occurs in the monolayer disorder structure. This is similar to the case in an order-disorder separated quantum film. The results could offer useful information for understanding and manipulating the electronic properties of bilayer hexagonal boron nitride quantum films.