Author:
Gao Bo ,Liu Gang ,Wang Li-Xin ,Han Zheng-Sheng ,Zhang Yan-Fei ,Wang Chun-Ling ,Wen Jing-Chao ,
Abstract
Total dose effects of domestic VDMOS devices used in satellite under different bias conditions are investigated. The dependences of the typical electrical parameters such as threshold voltage, breakdown voltage, on-state resistance, and leakage current on total dose are discussed. The experimental results show that the electrical parameters of the irradiated domestic VDMOS devices fulfill the design requirements. These devices also meet the work demand in a complex ionizing total dose irradiation environment. In addition, our experimental results are meaningful and important for further improving the design and the process of the others types of domestic radiation hardened VDMOS devices.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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