Author:
Zhang Xiang ,Liu Bang-Wu ,Xia Yang ,Li Chao-Bo ,Liu Jie ,Shen Ze-Nan ,
Abstract
The material characteristics and one of the preparation methods, atomic layer deposition of Al2O3 are introduced. The passivation mechanisms (chemical passivation and field-effect passivation) of Al2O3 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of Al2O3 passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the Al2O3 passivation process and the application to industry production are proposed.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference41 articles.
1. Aberle A G 2000 Progress in Photovoltaics: Research and Applications 8 473
2. Dauwe S, Schmidt J, Hezel R 2002 Photovoltaic Specialists Conference New Orleans, Louisiana, May 21-24, 2002 p1246
3. Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden M C M, Kessels W M M 2008 Progress in Photovoltaics: Research and Applications 16 461
4. Hodson C, Kessels E 2009 Photovoltaics World 9 17
5. Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 2112
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献