Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source

Abstract

With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O2 mixed gases, a new type of Ni/Si oxide source called self-released nickel source is fabricated. This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni. Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source. That is useful for widen process window. The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.