Author:
Qi Kai,Zhu Xing-Guang,Wang Jun,Xia Guo-Dong,
Abstract
With the size of high-performance electronic device decreasing (down to nanoscale), and the accompanying heat dissipation becomes a big problem due to its extremely high heat generation density. To tackle the ever-demanding heat dissipation requirement, intensive work has been done to develop techniques for chip-level cooling. Among the techniques reported in the literature, liquid cooling appears to be a good candidate for cooling high-performance electronic devices. However, when the device size is reduced to the sub-micro or nanometer level, the thermal resistance on the solid-liquid interface cannot be ignored in the heat transfer process. Usually, the interfacial thermal transport can be enhanced by using nanostructures on the solid surface because of the confinement effect of the fluid molecules filling up the nano-grooves and the increase of the solid-liquid interfacial contact area. However, in the case of weak interfacial couplings, the fluid molecules cannot enter into the nano-grooves and the interfacial thermal transport is suppressed. In the present work, the heat transfer system between two parallel metal plates filled with deionized water is investigated by molecular dynamics simulation. Electronic charges are applied to the upper plate and lower plate to create a uniform electric field that is perpendicular to the surface, and three types of nanostructures with varying size are arranged on the lower plate. It is found that the wetting state at the solid-liquid interface can change from Cassie state into Wenzel state with strength of the electric field increasing. Owing to the transition from the dewetting state to wetting state (from Wenzel to Cassie wetting state), the Kapitza length can be degraded and the solid-liquid interfacial heat transfer can be enhanced. The mechanism of the enhancing hart transfer is discussed based on the calculation of the number density distribution of the water molecules between the two plates. When the charge is further increased, electrofreezing appears, and a solid hydrogen bonding network is formed in the system, resulting in the thermal conductivity increasing to 1.2 W/(m·K) while the thermal conductivity remains almost constant when the electric charge continues to increase.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences