Author:
Xiong Da-Yuan ,Li Ning ,Xu Wen-Lan ,Zhen Hong-Lou ,Li Zhi-Feng ,Lu Wei ,
Abstract
A study of the carrier transport performance of GaAs/AlGaAs very long wavelength quantum well infrared photodetectors (peak wavelength: 15 μm; period: >40) has been carried out based on quantum wave transport theory. It was shown that the thermoexcitation effect dominates in the devices. By the current continuity and self-consistent calculation based on Schrdinger equation and Poisson equation, we found that the main feature resulting from the model is the redistribution of the carriers and the electric field along the whole structure being made uneven to maintain current conservation. The high-field region extends over a few barriers near the emitter contact, which takes up a considerable part of the applied voltage. The conventional flat band model assumes that the applied voltage drops linearly across the structure, leading to the numerical value of dark current to be far from the experiments, especially at small bias. The numerical result of self-consistent calculation well explains the measurement data.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献