Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method

Abstract

SiC films were deposited on Si(111) substrates by radio-frequency (RF) sputtering method. High-resolution x-ray diffraction and infrared (IR) absorption spectroscopy were used to investigate the composition and bonding structures of the SiC films. The analysis indicated that the samples deposited at high temperatures (＞800℃) were found to consist of 4HSiC or 3CSiC crystallites, while the amorphous films were obtained at lower temperatures. IR spectra suggested that the main absorption property was caused by Si—Cb ondings. Furthermore, atomic force microscopy was used to examine the surface morphology of the SiC films and the field emission properties of the films were studied.