Author:
ZHANG TING-QING ,LIU JIA-LU ,LI JIAN-JUN ,WANG JIAN-PING ,ZHANG ZHENG-XUAN ,XU NA-JUN ,ZHAO YUAN-FU ,HU YU-HONG ,
Abstract
The relation between the threshold voltage shift of BF+2 implanted Si-gate PMOSFET and the total γ-irradiation dose has been systematically studied,and the mechanism of γ-irradiation hardening for BF+2 implantation has also been analyzed in detail.The studies show that BF+2 implantation has a strong suppression for the threshold voltage shift of BF+2 implanted Si-gate PMOSFET under γ-irradiation;optimum BF+2 implantation dose in the hardened Si-Gate PMOSFET ranges from 5×1014—2×1015cm-2;F atoms distributed at SiO2/Si interface,which suppress the oxide-trap charges and interface-trap charges produced under γ-irradiation,may be the main origin of BF+2-implanted and hardened Si-gate PMOSFET.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
8 articles.
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