Author:
Peng Zi-Long ,Han Xiu-Feng ,Zhao Su-Fen ,Wei Hong-Xiang ,Du Guan-Xiang ,Zhan Wen-Shan ,
Abstract
A new method of readout and writing process driven by perpendicular current in magnetoresistantive random access memory (MRAM) based on the magnetic tunneling junction is reported, and its schematic structure and operation are described.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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