Multicomponent Model of Charge Transport in Quantum Semiconductor Devices
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Published:2021-02-24
Issue:1
Volume:23
Page:24-31
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ISSN:1813-8586
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Container-title:Nano- i Mikrosistemnaya Tehnika
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language:
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Short-container-title:NMST
Abstract
A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.
Publisher
New Technologies Publishing House
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Cited by
2 articles.
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