Efficient pure-red perovskite light-emitting diodes with strong passivation via ultrasmall-sized molecules

Author:

Jiang Ji12ORCID,Shi Mingming12,Xia Zhengchang12ORCID,Cheng Yong12,Chu Zema12,Zhang Wei1ORCID,Li Jingzhen12,Yin Zhigang12ORCID,You Jingbi12ORCID,Zhang Xingwang12ORCID

Affiliation:

1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.

Abstract

Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.

Publisher

American Association for the Advancement of Science (AAAS)

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