Ultralow voltage–driven efficient and stable perovskite light-emitting diodes

Author:

Zheng Song1ORCID,Wang Zhibin1ORCID,Jiang Naizhong1,Huang Hailiang1,Wu Ximing1,Li Dan1,Teng Qian2,Li Jinyang2,Li Chenhao2,Li Jinsui2,Pang Tao3,Zeng Lingwei4ORCID,Zhang Ruidan1,Huang Feng1ORCID,Lei Lei5,Wu Tianmin6ORCID,Yuan Fanglong2ORCID,Chen Daqin178ORCID

Affiliation:

1. College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China.

2. Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.

3. Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou 313000, China.

4. School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, Hunan 411201, China.

5. Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, China.

6. Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China.

7. Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou 350117, China.

8. Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou 350117, China.

Abstract

The poor operational stability of perovskite light-emitting diodes (PeLEDs) remains a major obstacle to their commercial application. Achieving high brightness and quantum efficiency at low driving voltages, thus effectively reducing heat accumulation, is key to enhancing the operational lifetime of PeLEDs. Here, we present a breakthrough, attaining a record-low driving voltage while maintaining high brightness and efficiency. By thoroughly suppressing interface recombination and ensuring excellent charge transport, our PeLEDs, with an emission peak at 515 nanometers, achieve a maximum brightness of 90,295 candelas per square meter and a peak external quantum efficiency of 27.8% with an ultralow turn-on voltage of 1.7 volts (~70% bandgap voltage). Notably, Joule heat is nearly negligible at these low driving voltages, substantially extending the operational lifetime to 7691.1 hours. Our optimized strategies effectively tackle stability issue through thermal management, paving the way for highly stable PeLEDs.

Publisher

American Association for the Advancement of Science (AAAS)

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