Exciton control in a room temperature bulk semiconductor with coherent strain pulses-Reference-Cited by-同舟云学术

Exciton control in a room temperature bulk semiconductor with coherent strain pulses

Published:2019-11 Issue:11 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Baldini Edoardo¹^ORCID,Dominguez Adriel²,Palmieri Tania¹,Cannelli Oliviero¹^ORCID,Rubio Angel²³⁴^ORCID,Ruello Pascal⁵,Chergui Majed¹^ORCID

Affiliation:

1. Laboratory of Ultrafast Spectroscopy, ISIC and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

2. Departamento Fisica de Materiales, Universidad del País Vasco, Av. Tolosa 72, E-20018 San Sebastian, Spain.

3. Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany.

4. Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, NY 10010, USA.

5. Institut des Molécules et Matériaux du Mans, UMR CNRS 6283, Le Mans Université, 72085 Le Mans, France.

Abstract

Lattice acoustic waves induce giant modulations of the exciton properties in a semiconductor.

Funder

H2020 European Research Council

Swiss National Science Foundation

European Research Council Advanced Grant

European Unionion Horizon 2020 research Marie Sklodowska-Curie grant

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference47 articles.

1. W. Brütting Introduction to the Physics of Organic Semiconductors (Wiley Online Library 2006).

2. Excitonic Feature in Hybrid Perovskite CH3NH3PbBr3 Single Crystals

3. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites

4. Valleytronics in 2D materials

5. Room-temperature stimulated emission of ZnO: Alternatives to excitonic lasing

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