Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention-Reference-Cited by-同舟云学术

Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention

Published:2021-09-03 Issue:36 Volume:7 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhang Yuting¹²^ORCID,Poddar Swapnadeep¹²^ORCID,Huang He³,Gu Leilei¹,Zhang Qianpeng¹²,Zhou Yu¹^ORCID,Yan Shuai⁴,Zhang Sifan⁴^ORCID,Song Zhitang⁴^ORCID,Huang Baoling³^ORCID,Shen Guozhen⁵^ORCID,Fan Zhiyong¹²⁶⁷^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.

2. Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China.

3. Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.

4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

5. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

6. Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.

7. HKUST-Shenzhen Research Institute, No. 9 Yuexing First RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China.

Abstract

Stable high-density perovskite nanowire array Re-RAMs report unprecedented long retention time and fast switching speed.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference64 articles.

1. D. Ielmini R. Waser Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications (John Wiley & Sons 2015).

2. ReRAM: History, Status, and Future

3. B. Govoreanu G. Kar Y. Y. Chen V. Paraschiv S. Kubicek A. Fantini I. Radu L. Goux S. Clima R. Degraeve N. Jossart O. Richard T. Vandeweyer K. Seo P. Hendrickx G. Pourtois H. Bender L. Altimime D. Wouters J. A. Kittl M. Jurczak 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance reliability and low-energy operation in 2011 International Electron Devices Meeting (IEEE 2011) pp. 31.36.31–31.36.34.

4. Y.-B. Kim S. R. Lee D. Lee C. B. Lee M. Chang J. H. Hur M. J. Lee G. S. Park C. J. Kim U. I. Chung Bi-layered RRAM with unlimited endurance and extremely uniform switching in 2011 Symposium on VLSI Technology—Digest of Technical Papers (IEEE 2011) pp. 52–53.

5. Z. Wei T. Takagi Y. Kanzawa Y. Katoh T. Ninomiya K. Kawai S. Muraoka S. Mitani K. Katayama S. Fujii R. Miyanaga Y. Kawashima T. Mikawa K. Shimakawa K. Aono Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model in 2011 International Electron Devices Meeting (IEEE 2011) pp. 31.34.31–31.34.34.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase Engineering for Stability of CsPbI₃ Nanowire Optoelectronics;Advanced Functional Materials;2024-01-31

2. Self‐Assembly of Delta‐Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism;Small;2024-01-20

3. Geometric Shape Recognition with an Ultra-High Density Perovskite Nanowire Array-Based Artificial Vision System;ACS Applied Materials & Interfaces;2024-01-18

4. Neuromorphic computing based on halide perovskites;Nature Electronics;2023-12-21

5. Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability;ACS Applied Electronic Materials;2023-11-20