In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields-Reference-Cited by-同舟云学术

In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields

Published:2017-12 Issue:12 Volume:3 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Johannes Andreas¹^ORCID,Salomon Damien¹,Martinez-Criado Gema¹²,Glaser Markus³,Lugstein Alois³^ORCID,Ronning Carsten⁴^ORCID

Affiliation:

1. European Synchrotron Radiation Facility, 71 Avenue des Martyrs, Grenoble 30843, France.

2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Spain.

3. Institute for Solid State Electronics, Technische Universität Wien, Floragasse 7, 1040 Vienna, Austria.

4. Institute of Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany.

Abstract

Unrivaled XANES imaging resolution of <100 nm, XANES and XBIC conclusively identify the active area of a nanowire device.

Funder

Deutsche Forschungsgemeinschaft

European Synchrotron Radiation Facility

Bundesministerium für Bildung und Forschung

Austrian Science Fund

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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