Probing vacancy behavior across complex oxide heterointerfaces-Reference-Cited by-同舟云学术

Probing vacancy behavior across complex oxide heterointerfaces

Published:2019-02 Issue:2 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhu Jiaxin¹^ORCID,Lee Jung-Woo²^ORCID,Lee Hyungwoo²,Xie Lin³,Pan Xiaoqing³^ORCID,De Souza Roger A.⁴,Eom Chang-Beom²^ORCID,Nonnenmann Stephen S.¹^ORCID

Affiliation:

1. Department of Mechanical and Industrial Engineering, University of Massachusetts-Amherst, Amherst, MA 01003, USA.

2. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.

3. Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, CA 92697, USA.

4. Institute of Physical Chemistry, RWTH Aachen University, Aachen 52056, Germany.

Abstract

Real-time probes profile changes in vacancy distributions within substrate-supported oxide films induced by deposition processes.

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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