Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers

Author:

Zhang Chendong1,Chuu Chih-Piao2,Ren Xibiao3,Li Ming-Yang45,Li Lain-Jong45,Jin Chuanhong3,Chou Mei-Yin267,Shih Chih-Kang1

Affiliation:

1. Department of Physics, University of Texas at Austin, Austin, TX 78712, USA.

2. Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei 10617, Taiwan.

3. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People’s Republic of China.

4. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia.

5. Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.

6. School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.

7. Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Abstract

A periodic modulation of the local bandgap in the rotationally aligned MoS 2 /WSe 2 bilayer creates a 2D electronic superlattice.

Funder

Welch Foundation

National Science Foundation

National basic research Program of China

national basic research program of China

Division of Materials Research

Air Force Research Laboratory

National Natural Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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