Flexible ferroelectric element based on van der Waals heteroepitaxy-Reference-Cited by-同舟云学术

Flexible ferroelectric element based on van der Waals heteroepitaxy

Published:2017-06-02 Issue:6 Volume:3 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Jiang Jie¹,Bitla Yugandhar²,Huang Chun-Wei²^ORCID,Do Thi Hien³,Liu Heng-Jui⁴,Hsieh Ying-Hui²,Ma Chun-Hao⁵,Jang Chi-Yuan⁶,Lai Yu-Hong²^ORCID,Chiu Po-Wen⁵,Wu Wen-Wei²,Chen Yi-Chun⁶,Zhou Yi-Chun¹,Chu Ying-Hao²³⁷^ORCID

Affiliation:

1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Hunan 411105, China.

2. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.

3. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.

4. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan.

5. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

6. Department of Physics, National Cheng Kung University, Tainan, Taiwan.

7. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan.

Abstract

A flexible ferroelectric memory element based on oxide heteroepitaxy has been demonstrated with superior performance.

Funder

Ministry of Science and Technology, Taiwan

National Natural Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference43 articles.

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5. Review on physically flexible nonvolatile memory for internet of everything electronics;Ghoneim M. T.;Electronics,2015

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