Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal Surface-Reference-Cited by-同舟云学术

Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal Surface

Published:1994-07-22 Issue:5171 Volume:265 Page:490-496
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Hwang Ing-Shouh¹,Theiss Silva K.²,Golovchenko J. A.³

Affiliation:

1. Division of Applied Sciences, Harvard University, Cambridge, MA 02138, USA.

2. Department of Physics, Harvard University, Cambridge, MA 02138, USA

3. Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, MA 02138, and Rowland Institute for Science, Cambridge, MA 02142, USA.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference25 articles.

1. AARTS, J, CORE-LEVEL STUDY OF THE PHASE-TRANSITION ON THE GE(111)-C(2X8) SURFACE, PHYSICAL REVIEW B 38: 3925 (1988).

2. ABRAHAM, M, SURFACE PHASE-TRANSITIONS ON CLEAN GE(111) STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, PHYSICAL REVIEW B 41: 9828 (1990).

3. BECKER, R.S., DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY, PHYSICAL REVIEW B 39: 1633 (1989).

4. BECKER, R.S., TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES, PHYSICAL REVIEW LETTERS 54: 2678 (1985).

5. Thermodynamics and Kinetics of Diffusion in Solids 1985

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