Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures-Reference-Cited by-同舟云学术

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures

Published:2022-04-22 Issue:6591 Volume:376 Page:406-410
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Barré Elyse¹²^ORCID,Karni Ouri¹³^ORCID,Liu Erfu⁴^ORCID,O’Beirne Aidan L.¹⁵^ORCID,Chen Xueqi⁵^ORCID,Ribeiro Henrique B.¹,Yu Leo³,Kim Bumho⁶^ORCID,Watanabe Kenji⁷^ORCID,Taniguchi Takashi⁸^ORCID,Barmak Katayun⁹,Lui Chun Hung⁴^ORCID,Refaely-Abramson Sivan¹⁰^ORCID,da Jornada Felipe H.¹¹^ORCID,Heinz Tony F.¹³^ORCID

Affiliation:

1. SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA.

2. Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.

3. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.

4. Department of Physics and Astronomy, University of California, Riverside, CA 92521, USA.

5. Department of Physics, Stanford University, Stanford, CA 94305, USA.

6. Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA.

7. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

8. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

9. Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA.

10. Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel.

11. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.

Abstract

Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference55 articles.

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