Anomalous Spiral Motion of Steps Near Dislocations on Silicon Surfaces-Reference-Cited by-同舟云学术

Anomalous Spiral Motion of Steps Near Dislocations on Silicon Surfaces

Published:2006-09 Issue:5791 Volume:313 Page:1266-1269
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Hannon J. B.¹²,Shenoy V. B.¹²,Schwarz K. W.¹²

Affiliation:

1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.

2. Division of Engineering, Brown University, Providence, RI 02912, USA.

Abstract

We have used low-energy electron microscopy to measure step motion on Si(111) and Si(001) near dislocations during growth and sublimation. Steps on Si(111) exhibit the classic rotating Archimedean spiral motion, as predicted by Burton, Cabrera, and Frank. Steps on Si(001), however, move in a strikingly different manner. Thestrain-relieving anomalous behavior can be understood in detail by considering how the local step velocity is affected by the nonuniform strain field arising from the dislocation. We show how the dynamic step-flow pattern is related to the dislocation slip system.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference26 articles.

1. The influence of dislocations on crystal growth

2. S. Y. Shiryaev, F. Jensen, J. Lundsgaard Hansen, J. Wulff Pedersen, A. Nylandsted Larsen, Phys. Rev. Lett.78, 503 (1998).

3. Ordering of Ge quantum dots with buried Si dislocation networks

4. W. K. Burton, N. Cabrera, F. C. Frank, Proc. R. Soc. A243, 299 (1950).

5. Low energy electron microscopy

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