Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor-Reference-Cited by-同舟云学术

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor

Published:2016-12-01 Issue:49 Volume:8 Page:34108-34114
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cheng Jianpeng¹,Yang Xuelin¹,Zhang Jie¹,Hu Anqi¹,Ji Panfeng¹,Feng Yuxia¹,Guo Lei¹,He Chenguang¹,Zhang Lisheng¹,Xu Fujun¹,Tang Ning¹,Wang Xinqiang¹²,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Beijing Municipality

Key Laboratory of Nanodevices and Applications

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b11124

Reference40 articles.

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2. Recent Progress in GaN-Based Light-Emitting Diodes

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes

5. Direct Low-Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High-Power Electronics

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