Quantized chiral edge conduction on domain walls of a magnetic topological insulator-Reference-Cited by-同舟云学术

Quantized chiral edge conduction on domain walls of a magnetic topological insulator

Published:2017-12-08 Issue:6368 Volume:358 Page:1311-1314
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Yasuda K.¹^ORCID,Mogi M.¹^ORCID,Yoshimi R.²^ORCID,Tsukazaki A.³,Takahashi K. S.²⁴^ORCID,Kawasaki M.¹²,Kagawa F.²^ORCID,Tokura Y.¹²^ORCID

Affiliation:

1. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.

2. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.

3. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

4. Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan.

Abstract

A magnetic tip reconfigures edge states Topological phases of matter are characterized by invariants such as Chern numbers, which determine their global properties. On the boundary of two domains with different Chern numbers, chiral edge states are expected to form. Yasuda et al. engineered such states in samples of a quantum anomalous Hall material by creating magnetic domains using the tip of a magnetic force microscope. The existence of chiral edge states along the domain walls was confirmed with electrical transport measurements. The ability to reconfigure and manipulate these states may improve spintronics. Science , this issue p. 1311

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference38 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

4. Two-dimensional gas of massless Dirac fermions in graphene

5. Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

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