Scalable T 2 resistivity in a small single-component Fermi surface

Author:

Lin Xiao1,Fauqué Benoît1,Behnia Kamran1

Affiliation:

1. Laboratoire de Physique et Etude des Matériaux (CNRS/UPMC), Ecole Supérieure de Physique et de Chimie Industrielles, 10 Rue Vauquelin, F-75005 Paris, France.

Abstract

Trying to break a stubborn law The electrical resistivity of most metals at low temperatures has a characteristic quadratic dependence on temperature. This law is typically ascribed to the scattering of electrons off each other in the presence of a crystal lattice. By measuring the resistivity of SrTiO 3 with varying dopant concentrations, Lin et al. test the applicability of the law for metals with low carrier densities. The law persists down to the lowest carrier concentrations, into the regime where the conditions for this behavior were previously thought to break down. Science , this issue p. 945

Funder

Agence Nationale de Recherche

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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