DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Author:

Zhao Mengyu1ORCID,Chen Yahong12ORCID,Wang Kexin1ORCID,Zhang Zhaoxuan13ORCID,Streit Jason K.4ORCID,Fagan Jeffrey A.4ORCID,Tang Jianshi5ORCID,Zheng Ming4,Yang Chaoyong2ORCID,Zhu Zhi2ORCID,Sun Wei1ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China.

2. Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.

3. State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116024, China.

4. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

5. Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

Abstract

DNA bricks build nanotube transistors Semiconducting carbon nanotubes (CNTs) are an attractive platform for field-effect transistors (FETs) because they potentially can outperform silicon as dimensions shrink. Challenges to achieving superior performance include creating highly aligned and dense arrays of nanotubes as well as removing coatings that increase contact resistance. Sun et al. aligned CNTs by wrapping them with single-stranded DNA handles and binding them into DNA origami bricks that formed an array of channels with precise intertube pitches as small as 10.4 nanometers. Zhao et al. then constructed single and multichannel FETs by attaching the arrays to a polymer-templated silicon wafer. After adding metal contacts across the CNTs to fix them to the substrate, they washed away all of the DNA and then deposited electrodes and gate dielectrics. The FETs showed high on-state performance and fast on-off switching. Science , this issue p. 874 , p. 878

Funder

National Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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