DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors-Reference-Cited by-同舟云学术

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Published:2020-05-22 Issue:6493 Volume:368 Page:878-881
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Zhao Mengyu¹^ORCID,Chen Yahong¹²^ORCID,Wang Kexin¹^ORCID,Zhang Zhaoxuan¹³^ORCID,Streit Jason K.⁴^ORCID,Fagan Jeffrey A.⁴^ORCID,Tang Jianshi⁵^ORCID,Zheng Ming⁴,Yang Chaoyong²^ORCID,Zhu Zhi²^ORCID,Sun Wei¹^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China.

2. Collaborative Innovation Center of Chemistry for Energy Materials, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, State Key Laboratory of Physical Chemistry of Solid Surfaces, Department of Chemical Biology, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.

3. State Key Laboratory of Fine Chemicals, Dalian University of Technology, Dalian 116024, China.

4. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

5. Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

Abstract

DNA bricks build nanotube transistors Semiconducting carbon nanotubes (CNTs) are an attractive platform for field-effect transistors (FETs) because they potentially can outperform silicon as dimensions shrink. Challenges to achieving superior performance include creating highly aligned and dense arrays of nanotubes as well as removing coatings that increase contact resistance. Sun et al. aligned CNTs by wrapping them with single-stranded DNA handles and binding them into DNA origami bricks that formed an array of channels with precise intertube pitches as small as 10.4 nanometers. Zhao et al. then constructed single and multichannel FETs by attaching the arrays to a polymer-templated silicon wafer. After adding metal contacts across the CNTs to fix them to the substrate, they washed away all of the DNA and then deposited electrodes and gate dielectrics. The FETs showed high on-state performance and fast on-off switching. Science , this issue p. 874 , p. 878

Funder

National Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference36 articles.

1. “2013 International Technology Roadmap for Semiconductors (ITRS)” (Semiconductor Industry Association 2013); www.semiconductors.org/resources/2013-international-technology-roadmap-for-semiconductors-itrs/.

2. Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

3. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics

4. Channel length scaling behavior in transistors based on individual versus dense arrays of carbon nanotubes

5. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Cited by 110 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon nanotube materials for future integrated circuit applications;Materials Today;2024-10

2. Mass Production of Carbon Nanotube Transistor Biosensors for Point-of-Care Tests;Nano Letters;2024-08-15

3. Electric-Field-Driven Localization of Molecular Nanowires in Wafer-Scale Nanogap Electrodes;Nano Letters;2024-08-06

4. Orthogonal Determination of Competing Surfactant Adsorption onto Single-Wall Carbon Nanotubes During Aqueous Two-Polymer Phase Extraction via Fluorescence Spectroscopy and Analytical Ultracentrifugation;The Journal of Physical Chemistry C;2024-07-31

5. DNA‐Based Conductors: From Materials Design to Ultra‐Scaled Electronics;Small Methods;2024-07-25