Atomistic Mechanisms and Dynamics of Adhesion, Nanoindentation, and Fracture
Author:
Affiliation:
1. School of Physics, Georgia Institute of Technology, Atlanta, GA 30332
2. Surface Chemistry Branch, Code 6177, Naval Research Laboratory, Washington, DC 20375-5000
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference79 articles.
1. MATER ENG 90: C120 (1979).
2. ABRAHAM, F.F., COMPUTATIONAL STATISTICAL-MECHANICS METHODOLOGY, APPLICATIONS AND SUPERCOMPUTING, ADVANCES IN PHYSICS 35: 1 (1986).
3. ABRAHAM, F.F., COMPUTER-SIMULATIONS OF SURFACES, INTERFACES, AND PHYSISORBED FILMS, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2: 534 (1984).
4. ABRAHAM, F.F., EFFECT OF TIP PROFILE ON ATOMIC-FORCE MICROSCOPE IMAGES - A MODEL STUDY, PHYSICAL REVIEW LETTERS 60: 1314 (1988).
5. ADAMS, J.B., SELF-DIFFUSION AND IMPURITY DIFFUSION OF FCC METALS USING THE 5-FREQUENCY MODEL AND THE EMBEDDED ATOM METHOD, JOURNAL OF MATERIALS RESEARCH 4: 102 (1989).
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