Resonant Electron Scattering by Defects in Single-Walled Carbon Nanotubes-Reference-Cited by-同舟云学术

Resonant Electron Scattering by Defects in Single-Walled Carbon Nanotubes

Published:2001-01-12 Issue:5502 Volume:291 Page:283-285
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Bockrath Marc¹,Liang Wenjie²,Bozovic Dolores¹,Hafner Jason H.²,Lieber Charles M.²,Tinkham M.¹,Park Hongkun²

Affiliation:

1. Department of Physics,

2. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.

Abstract

We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage–dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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5. Room-temperature transistor based on a single carbon nanotube

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