Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices
Author:
Affiliation:
1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference19 articles.
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4. ESAKI, L, NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS, PHYSICAL REVIEW 109: 603 (1958).
5. HAMERS, R.J., ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY, PHYSICAL REVIEW LETTERS 60: 2527 (1988).
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