Affiliation:
1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA.
Abstract
Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(
tert
-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.
Publisher
American Association for the Advancement of Science (AAAS)
Reference46 articles.
1. For an introductory survey of these methods see D. L. Smith Thin Film Deposition: Principles and Practice (McGraw-Hill New York 1995).
2. For a recent review of ALD see M. Ritala M. Leskela in Deposition and Processing vol. 1 of Handbook of Thin Film Materials H. S. Nalwa Ed. (Academic Press San Diego CA 2002) pp. 103–159.
3. Zhang H., Solanki R., J. Electrochem. Soc. 148, F63 (2001).
4. Kukli K., Ihanus J., Ritala M., Leskela M., J. Electrochem. Soc. 144, 300 (1997).
5. Braun A. E., Semicond. Int. 24, 52 (2001).
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