Robust spin-polarized midgap states at step edges of topological crystalline insulators-Reference-Cited by-同舟云学术

Robust spin-polarized midgap states at step edges of topological crystalline insulators

Published:2016-12-09 Issue:6317 Volume:354 Page:1269-1273
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Sessi Paolo¹,Di Sante Domenico²,Szczerbakow Andrzej³,Glott Florian¹,Wilfert Stefan¹,Schmidt Henrik¹,Bathon Thomas¹,Dziawa Piotr³,Greiter Martin²,Neupert Titus⁴,Sangiovanni Giorgio²,Story Tomasz³,Thomale Ronny²,Bode Matthias¹⁵

Affiliation:

1. Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

2. Institut für Theoretische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

3. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland.

4. Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.

5. Wilhelm Conrad Röntgen-Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

Abstract

An edge that is hard to get rid of A distinguishing characteristic of topological insulators (TIs) is that they have conducting states on their boundary—a surface for a three-dimensional (3D) TI or a line edge for a 2D TI. Sessi et al. used scanning tunneling spectroscopy to discover unusual 1D states in a 3D crystalline TI. The states appeared on the edge of a particular kind of step in the crystal and survived large magnetic fields and increased temperatures. This robustness bodes well for the potential use of these states in practical applications. Science , this issue p. 1269

Funder

DFG

Polish National Science Centre NCN

European Research Council

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference26 articles.

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3. Quantum Spin Hall Insulator State in HgTe Quantum Wells