Hydrogen as a Probe of Semiconductor Surface Structure: The Ge(111)-c(2 × 8) Surface
Author:
Affiliation:
1. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference16 articles.
1. BECKER, R.S., DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY, PHYSICAL REVIEW B 39: 1633 (1989).
2. BINNIG, G, SCANNING TUNNELING MICROSCOPY, HELVETICA PHYSICA ACTA 55: 726 (1982).
3. BOLAND, J.J., NATURE OF THE HYDRIDE SPECIES ON THE HYDROGENATED SI(111)-(7X7) SURFACE, JOURNAL OF PHYSICAL CHEMISTRY 95: 1521 (1991).
4. BOLAND, J.J., THE DRIVING FORCE BEHIND THE CHEMISTRY OF HYDROGEN ON THE SI(111)-7X7 SURFACE, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9: 764 (1991).
5. BOLAND, J.J., FORMATION OF SI(111)-(1X1)CL, PHYSICAL REVIEW B 41: 9865 (1990).
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2. 10.1093/acprof:oso/9780199211500.005.0004;Introduction to Scanning Tunneling Microscopy;2007-09-01
3. 10.1093/acprof:oso/9780199211500.005.0001;Introduction to Scanning Tunneling Microscopy;2007-09-01
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