STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC PHOTORESISTS ON MONOCRYSTALLINE SILICON-Reference-Cited by-同舟云学术

STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC PHOTORESISTS ON MONOCRYSTALLINE SILICON

Published:2023-10-31 Issue:2 Volume: Page:35-41
ISSN:2710-4230
Container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES
language:
Short-container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES

Author:

VABISHCHEVICH S.¹,VABISHCHEVICH N.¹,BRINKEVICH D.²,PROSOLOVICH V.²,KOLOS V.³,ZUBOVA O.³

Affiliation:

1. Euphrosyne Polotskaya State University of Polotsk

2. Belarusian State University

3. “INTEGRAL” Joint Stock Company

Abstract

The adhesive and strength properties of electron-irradiated NFR 016D4 photoresist films for explosive lithography deposited on the surface of KDB-10 single-crystalline silicon wafers by centrifugation have been studied. It has been experimentally established that electron irradiation leads to warping and partial detachment of the NFR 016D4 photoresist film from the silicon substrate. Irradiated photoresist films behave like brittle materials. A significant decrease in crack resistance and adhesion to the silicon substrate of irradiated photoresist films was observed. caused by radiation-induced processes at the photoresist/silicon interface.

Publisher

Polotsk State University

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