STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY-Reference-Cited by-同舟云学术

STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY

Published:2022-05-12 Issue:4 Volume:38 Page:49-55
ISSN:2710-4230
Container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES
language:
Short-container-title:HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES

Author:

VABISHCHEVICH S.¹^ORCID,VABISHCHEVICH N.¹,BRINKEVICH D.²^ORCID,PROSOLOVICH V.²,KOLOS V.³,ZUBOVA O.³

Affiliation:

1. Polotsk State University

2. Belarusian State University

3. JSC "INTEGRAL"

Abstract

The adhesion and strength properties of NFR 016b4 photoresist (PR) films for explosive lithography deposited on the surface of KDB-10 single-crystal silicon wafers by centrifugation have been studied. It has been found that they behave like brittle materials. The FR microhardness measured at low loads was ~0,3 GPa, decreasing slightly with increasing film thickness. The crack resistance parameters (fracture toughness coefficient K1С and effective fracture energy γ) at low loads do not depend on the film thickness. With increasing load, the crack resistance of a thin film increased faster than that of a thick one. The specific peeling energy G under normal loading was ~1,2 J/m2 for thick and ~0,7 J/m2 for thin films. The higher values of G for thick films are most likely due to the compensation of elastic stress fields arising at the photoresist/silicon interface. The strength properties of NFR 016b4 explosive lithography photoresist and FP9120 positive diazoquinone-novolac photoresist are compared.

Publisher

Polotsk State University

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1. STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC PHOTORESISTS ON MONOCRYSTALLINE SILICON;HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES;2023-10-31