Liquid Ga-In-Sn alloys printing of novel GaInSnO ultra-thin semiconductor films and controllable performance field effect transistors

Abstract

Abstract Wide bandgap semiconductor Ga2O3 is a high potential material for fabricating next generation power electronics. However, the low conductivity and carrier mobility of Ga2O3 kept standing as big barriers for its practical application. For many years, the efficient and low cost doping process to enhance the conductivity of Ga2O3 is always a technological challenge. Here, we reported a one step synthesis strategy to prepare Ga2O3 doped with In2O3 and SnO2 (GaInSnO) multilayers from liquid Ga-In-Sn alloys’ surface. A large area, controllable thickness and high conductivity GaInSnO multilayers can be facilely obtained by using van der Waals exfoliation at low temperature of 200 ℃. The printed GaInSnO multilayers are transparent and display bandgaps above 4.5 eV. The field effect transistors (FET) based on the printed GaInSnO multilayers show n-type switching with on/off ratio all exceeding 105, a maximum field-effect mobility (µeff) of 65.40 cm2 V−1 s−1, and a minimum sub-threshold swing (SS) of 91.11 mV dec-1 at room temperature. With rinsing Ga concentration in GaInSnO multilayers, the µeff of fabricated FET decrease, while the SS increase. The present method can be further extended to produce various doped Ga2O3 films, and utilized to fabricate electronic and photoelectronic devices based on modified Ga2O3.