A low power injection-locked CDR using 28 nm FDSOI technology for burst-mode applications-Reference-Cited by-同舟云学术

A low power injection-locked CDR using 28 nm FDSOI technology for burst-mode applications

Published:2022-09-27 Issue: Volume: Page:
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Author:

Mao Yuqing¹,Charlon Yoann¹,Jacquemod Gilles¹,Leduc Yves¹

Affiliation:

1. Université Côte d’Azur

Abstract

Abstract In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using 28 nm FDSOI technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors allows us to create a QRO (Quadrature Ring Oscillator) reducing both size and power consumption. By injecting a digital signal into this circuit, we realize an Injection-Locked Oscillator (ILO) with low jitter. Thanks to the good performance of this oscillator, we can propose a low power ILCDR with low jitter and fast locking time for burst-mode applications. The main novelty consists in the implementation of a complementary QRO based on back-gate control using FDSOI technology in order to realize a simple and efficient ILCDR circuit. With a Pseudo-Random Binary Sequence (27 PRBS) at 868Mbps, the recovered clock jitter is 18.5 ps (1.6%UIp-p) and the recovered data jitter is 18.7 ps (1.6%UIp-p). With a 0.6 V power supply, the power consumption is 4.67 mA (2.8 mW). The estimated Chip size is around 6600 µm².

Publisher

Research Square Platform LLC

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