Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy-Reference-Cited by-同舟云学术

Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy

Published:2023-08-24 Issue: Volume: Page:
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Author:

Bøggild Peter¹,Whelan Patrick²,De Fazio Domenico³,Pasternak Iwona⁴,Thomsen Joachim¹,Zelzer Steffen²,Mikkelsen Martin²,Booth Timothy¹,Diekhöner Lars²,Sassi Ugo⁵,Johnstone Duncan⁵,Midgley Paul⁵,Strupinski Wlodek⁶,Jepsen Peter Uhd¹,Ferrari Andrea⁵

Affiliation:

1. Technical University of Denmark

2. Aalborg University

3. Ca' Foscari University of Venice

4. Warsaw University of Technology

5. University of Cambridge

6. Vigo System (Poland)

Abstract

Abstract Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and small domains due to reconstructions of the substrate during growth. The THz conductivity spectrum matches the predictions of the phenomenological Drude-Smith model for conductors with non-isotropic scattering caused by backscattering from boundaries and line defects. We compare the charge carrier mean free path determined by THz-TDS with the average defect distance assessed by Raman spectroscopy, and the grain boundary dimensions as determined by transmission electron microscopy. The results indicate that even small angle orientation variations below 5° within graphene grains influence the scattering behavior consistent with significant backscattering contributions from grain boundaries.

Publisher

Research Square Platform LLC

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