Intensity Difference Map (IDM) Accuracy Analysis for OPC Efficiency Verification and Further Enhancement

Author:

Awad Ahmed1,Takahashi Atsushi1,Tanaka Satoshi2,Kodama Chikaaki2

Affiliation:

1. Department of Communications and Computer Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology

2. Toshiba Corporation Storage & Electronic Devices Solutions Company

Publisher

Information Processing Society of Japan

Subject

Electrical and Electronic Engineering,Computer Science Applications

Reference28 articles.

1. [1] Ma, X. and Arce, G.: Computational Lithography, Wiley Publisher (2010).

2. [2] Fabian Pease, R. and Chou, S.: Lithography and Other Patterning Techniques for Future Electronics, Proc. IEEE, pp.248-270 (2008).

3. [3] Granik, Y. and Cobb, N.: Matrix Optical Process Correction, US Patent US6928634 B2 (2003).

4. [4] Gu, A. and Zakhor, A.: Optical Proximity Correction With Linear Regression, IEEE Trans. Semiconductor Manufacturing, pp.263-271 (2008).

5. [5] Mukhejree, M., Buamm, Z., Lavin, M., Samuels, D. and Singh, R.: Method for Adaptive Segment Refinement Optical Proximity Correction, US Patent 7043712 (2006).

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1. Optical Proximity Correction (OPC) Under Immersion Lithography;Micro/Nanolithography - A Heuristic Aspect on the Enduring Technology;2018-05-02

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