Gamma ray effects on flash memory cell arrays

Abstract

Information stored in flash memories is physically represented by the absence or presence of charge on electrically isolated floating gates. Interaction of gamma rays with the insulators surrounding the floating gate produces effects that degrade the properties of memory cells, possibly leading to the corruption of the stored content. The cumulative nature of these effects is expressed through the total ionizing dose deposited by the gamma rays in the insulators surrounding the floating gate. Relying on both theory and experiment, we examine how the properties of cells in commercially available flash memories affect their sensitivity to gamma rays. Memory samples from several manufacturers, currently available on the market, can be compared with respect to data retention under gamma ray exposure.