Flash memory cells data loss caused by total ionizing dose and heavy ions-Reference-Cited by-同舟云学术

Flash memory cells data loss caused by total ionizing dose and heavy ions

Published:2014-01-01 Issue:10 Volume:12 Page:
ISSN:2391-5471
Container-title:Open Physics
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Author:

Petrov Andrey,Vasil’ev Alexey,Ulanova Anastasia,Chumakov Alexander,Nikiforov Alexander

Abstract

AbstractThe paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Publisher

Walter de Gruyter GmbH

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.2478/s11534-014-0503-6.pdf

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