Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

Author:

Stankovic Koviljka1,Vujisic Milos2ORCID,Dolicanin Edin3

Affiliation:

1. Vinča Institute of Nuclear Sciences, Radiation and Environmental Protection Department, Belgrade

2. Faculty of Electrical Engineering, Belgrade

3. Faculty of Electronic Engineering, Niš

Abstract

The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

Publisher

National Library of Serbia

Subject

Safety, Risk, Reliability and Quality,Nuclear Energy and Engineering

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