Affiliation:
1. Faculty of Electronic Engineering, Niš
2. Faculty of Civil Engineering and Architecture, Niš
Abstract
Our recent research of the effects of pulsed bias NBT stressing in p-channel
power VDMOSFETs is reviewed in this paper. The reduced degradation normally
observed under the pulsed stress bias conditions is discussed in terms of the
dynamic recovery effects, which are further assessed by varying the duty
cycle ratio and frequency of the pulsed stress voltage. The results are
analyzed in terms of the effects on device lifetime as well. A tendency of
stress induced degradation to decrease with lowering the duty cycle and/or
increasing the frequency of the pulsed stress voltage, which leads to the
increase in device lifetime, is explained in terms of enhanced dynamic
recovery effects.
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Cited by
5 articles.
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