NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
Author:
Affiliation:
1. Faculty of Electronic Engineering, Niš
2. Faculty of Civil Engineering and Architecture, Niš
3. Faculty of Electronic Engineering, Niš + Serbian Academy of Sciences and Arts, Branch Niš, Niš
4. Institute of Nuclear Sciences "Vinča", Belgrade
Abstract
Funder
Ministry of Education, Science and Technological Development of the Republic of Serbia
Publisher
National Library of Serbia
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Self-heating of stressed VDMOS devices under specific operating conditions;Microelectronics Reliability;2023-11
2. Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
3. Consecutive Irradiation and Thermal Annealing of Commercial P-Channel Power VDMOSFETs;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
4. An equivalent circuit model of NBTI effect for short-channel P-MOSFET;Microelectronics Reliability;2022-12
5. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress;Journal of Circuits, Systems and Computers;2022-07-07
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