Total ionizing dose effects and radiation testing of complex multifunctional VLSI devices

Author:

Boychenko Dmitry1,Kalashnikov Oleg1,Nikiforov Alexander1,Ulanova Anastasija1,Bobrovsky Dmitry1,Nekrasov Pavel1

Affiliation:

1. National Research Nuclear University (NRNU) “MEPHI”, Moscow, Russian Federation

Abstract

Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional ?simple? ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.

Publisher

National Library of Serbia

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of SAR ADC Performance Under Radiation Exposure;2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD);2023-07-03

2. Total Ionizing Dose Effects in High-Speed 16-bit Analog-to-Digital Converter;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09

3. The evolution of breakdown voltage and delay time under high overvoltage for different types of surge arresters;Facta universitatis - series: Electronics and Energetics;2021

4. A single power supply 0.1-3.5 GHz low noise amplifier design using a low cost 0.5 μm d-mode pHEMT process;Facta universitatis - series: Electronics and Energetics;2020

5. Physics-based modeling of TID induced global static leakage in different CMOS circuits;Microelectronics Reliability;2018-05

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