Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities-Reference-Cited by-同舟云学术

Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities

Published:2014 Issue:3 Volume:27 Page:329-338
ISSN:0353-3670
Container-title:Facta universitatis - series: Electronics and Energetics
language:en
Short-container-title:FACTA U EE

Author:

Sogoyan Armen¹,Artamonov Alexey¹,Nikiforov Alexander¹,Boychenko Dmitry¹

Affiliation:

1. National Research Nuclear University MEPhI, Moscow, Russia + JSC "Specialized electronic systems" (SPELS), Moscow, Russia

Abstract

A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma- and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.

Publisher

National Library of Serbia

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