Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3and Atomic Layer Deposition of Al2O3: A Comparative Study-Reference-Cited by-同舟云学术

Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y2O3and Atomic Layer Deposition of Al2O3: A Comparative Study

Published:2013-12-01 Issue:12 Volume:6 Page:121201
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Chu Rei-Lin,Hsueh Wei-Jen,Chiang Tsung-Hung,Lee Wei-Chin,Lin Hsiao-Yu,Lin Tsung-Da,Brown Gail J.,Chyi Jen-Inn,Huang Tsung-Shiew,Pi Tun-Wen,Kwo J. Raynien,Hong Minghwei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=12/a=121201/pdf

Reference25 articles.

1. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

2. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

3. Variety Transformation of Compound at GaSb Surface under Sulfur Passivation

4. Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

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