Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=9/a=095502/pdf
Reference22 articles.
1. Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET
2. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
3. Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures
4. Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
5. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
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