Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (<200 °C) without post annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=9/a=095501/pdf
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1. Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature;Journal of Alloys and Compounds;2024-12
2. Au-Induced Crystallization of Amorphous Ge Thin Films: An Indication of the Existence of a Recrystallization Process During Growth at Deep Subeutectic Temperature;2024
3. Fabrication of an atomically smooth Ge(111) surface by Au-induced crystallization at 170 °C;Applied Physics Letters;2023-04-24
4. Metal induced crystallization of polycrystalline silicon germanium: The morphological study between nickel and copper;CHEMISTRY BEYOND BORDERS: INTERNATIONAL CONFERENCE ON PHYSICAL CHEMISTRY: The 1st Annual Meeting of the Physical Chemistry Division of the Indonesian Chemical Society;2023
5. Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C);Journal of Vacuum Science & Technology B;2022-05
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