Numerical analysis of the Gibbs–Thomson effect on trench-filling epitaxial growth of 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=3/a=035601/pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor;Journal of Crystal Growth;2023-04
2. Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001);Japanese Journal of Applied Physics;2022-11-01
3. A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance;Chinese Physics B;2022-06-01
4. Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes;Journal of Crystal Growth;2020-09
5. Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC;Japanese Journal of Applied Physics;2019-04-10
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